Producent | Numer części | Arkusz danych | Szczegółowy opis |
Renesas Technology Corp |
2SC5752
|
225Kb / 22P |
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD
|
2SC5750
|
216Kb / 18P |
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) 4-PIN SUPER MINIMOLD
|
2SC5753
|
224Kb / 22P |
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
|
2SC5751
|
217Kb / 18P |
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
|
NEC |
2SC5754
|
89Kb / 13P |
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
|
Renesas Technology Corp |
2SC5754
|
222Kb / 15P |
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
|
NESG2101M05
|
172Kb / 15P |
NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW
|
NEC |
NESG2101M16
|
135Kb / 13P |
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
Renesas Technology Corp |
2SC5750
|
216Kb / 18P |
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION
July 2001 |
California Eastern Labs |
2SC5752
|
3Mb / 17P |
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION
|